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FEATURES
andbull; TrenchFETandreg; Power MOSFET
andbull; 100 % Rg Tested
andbull; Material categorization: For definitions of compliance please see
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APPLICATIONS
andbull; Smart Phones and Tablet PCs
- Load Switch
- Battery Switch
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Overview
The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET in an ultra-compact sC-70-3package, optimized for space-constrained, high-efficiency power management applications.With its 1.8V logic-level drive and 0.0459 ultra-low Rds(on), it delivers superior performance inportable electronics, automotive systems, and loT devices.
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Information
| Category | andnbsp; | |
| Mfr | andnbsp; | |
| Series | andnbsp; | |
| Packaging | Tape andamp; Reel (TR) Cut Tape (CT) Digi-Reelandreg; | andnbsp; andnbsp; andnbsp; |
| Part Status | Active | andnbsp; |
| FET Type | andnbsp; | |
| Technology | andnbsp; | |
| Drain to Source Voltage (Vdss) | 12 V | andnbsp; |
| Current - Continuous Drain (Id) @ 25anddeg;C | andnbsp; | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | andnbsp; |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5A, 4.5V | andnbsp; |
| Vgs(th) (Max) @ Id | 1V @ 250andmicro;A | andnbsp; |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 8 V | andnbsp; |
| Vgs (Max) | andplusmn;8V | andnbsp; |
| Input Capacitance (Ciss) (Max) @ Vds | 1275 pF @ 6 V | andnbsp; |
| FET Feature | - | andnbsp; |
| Power Dissipation (Max) | 1.2W (Ta), 1.7W (Tc) | andnbsp; |
| Operating Temperature | -55anddeg;C ~ 150anddeg;C (TJ) | andnbsp; |
| Grade | - | andnbsp; |
| Qualification | - | andnbsp; |
| Mounting Type | Surface Mount | andnbsp; |
| Supplier Device Package | SOT-23-3 (TO-236) | andnbsp; |
| Package / Case | andnbsp; | |
| Base Product Number |
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Drawing

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