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Home / Products / Integrated Circuit Components / TL062IDR 3MHz Low-Power JFET Op Amp ±18V Supply 1pA Input Bias 3mV Offset 1.5μV/°C Drift SOIC-8 -40°C to +125°C, Industrial-Grade /

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TL062IDR 3MHz Low-Power JFET Op Amp ±18V Supply 1pA Input Bias 3mV Offset 1.5μV/°C Drift SOIC-8 -40°C to +125°C, Industrial-Grade

TL062IDR 3MHz Low-Power JFET Op Amp ±18V Supply 1pA Input Bias 3mV Offset 1.5μV/°C Drift SOIC-8 -40°C to +125°C, Industrial-Grade
  • TL062IDR 3MHz Low-Power JFET Op Amp ±18V Supply 1pA Input Bias 3mV Offset 1.5μV/°C Drift SOIC-8 -40°C to +125°C, Industrial-Grade
  • TL062IDR 3MHz Low-Power JFET Op Amp ±18V Supply 1pA Input Bias 3mV Offset 1.5μV/°C Drift SOIC-8 -40°C to +125°C, Industrial-Grade
  • TL062IDR 3MHz Low-Power JFET Op Amp ±18V Supply 1pA Input Bias 3mV Offset 1.5μV/°C Drift SOIC-8 -40°C to +125°C, Industrial-Grade
  • TL062IDR 3MHz Low-Power JFET Op Amp ±18V Supply 1pA Input Bias 3mV Offset 1.5μV/°C Drift SOIC-8 -40°C to +125°C, Industrial-Grade
Products Detailed
TL062IDR Features • Very low power consumption • Typical supply current: 200 μA (per amplifier) • Wide common-mode and differential voltage ranges • ...
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