
Add to Cart
CSD17304Q3
FEATURES
• Optimizedfor5VGateDrive
• UltralowQgandQgd
• LowThermalResistance
• AvalancheRated
• PbFreeTerminalPlating
• RoHSCompliant
• HalogenFree
• SON3.3-mm×3.3-mmPlasticPackage
APPLICATIONS
• NotebookPointofLoad
• Point-of-LoadSynchronousBuckin
Networking,Telecom,andComputingSystems
DESCRIPTION
The CSD17304Q3 is a 30V N-channel NexFET™ power MOSFET from Texas Instruments (TI), featuring an advanced SON 3.3x3.3mm package. Designed for high-current, high-efficiency power conversion, its ultra-low Rds(on) (2.2mΩ) and 60A continuous current capability make it ideal for automotive electronics, industrial power systems, and motor drives.
✔ 80% smaller than TO-220 packages
✔ 60% lower conduction loss (vs. 5mΩ MOSFETs)
✔ Supports 1MHz PWM switching
INFORMATION
Category | | |
Mfr | | |
Series | | |
Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | |
Part Status | Active | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | 30 V | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V | |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 17A, 8V | |
Vgs(th) (Max) @ Id | 1.8V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 4.5 V | |
Vgs (Max) | +10V, -8V | |
Input Capacitance (Ciss) (Max) @ Vds | 955 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.7W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-VSON-CLIP (3.3x3.3) | |
Package / Case | | |
Base Product Number |
Drawing
1. 10 years components experience; One-Stop service for BOM list; PCB&PCBA Service.
2. Produce Communication Antenna, RF Coaxial Cable, RF Connector,Terminals.
3. Distribute GSM/GPRS,GPS,3G,4G/LTE Module.
Our high quality products , competitive price and professional service,