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Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design

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Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design

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Brand Name :Infineon
Model Number :IRF7420TRPBF
Certification :CE, GCF, ROHS
Place of Origin :China
MOQ :1
Price :Negotiable
Payment Terms :T/T, Western Union,
Supply Ability :1000pcs per month
Delivery Time :3-5 working days after received the payment
Packaging Details :Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Function :Step-Up, Step-Down
Output Configuration :Positive or Negative
Topology :Buck, Boost
Output Type :Adjustable
Number of Outputs :1
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Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Applications

Power Management Modules (PMIC): Widely used in motherboards, servers, network communication equipment, and portable electronics as load switches, power path management, and switching transistors in DC-DC synchronous buck/boost converters. Its integrated design significantly saves PCB space.

Motor Drive and Control: Ideal for driving small to medium-power DC motors, such as in robotics, automated equipment, and precision instruments, where it enables compact H-bridge or half-bridge circuits for motor direction and speed control.

Battery-Powered Devices: Used in smartphones, tablets, TWS earphone charging cases, portable medical devices, and more for battery protection circuits, charge/discharge management, and load switching. Its logic-level gate threshold (1.8V drive) and low on-resistance make it highly suitable for low-voltage, high-efficiency applications.

Signal Switching & Multiplexing: Applicable for routing analog or digital signals in test equipment, audio interfaces, or data acquisition systems.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

INFORMATION

Category
Mfr
Series
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
14mOhm @ 11.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
3529 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
Base Product Number

Drawing

Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design

Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design

Our advantage :

  • High quality products --- our offers are 100% new and original, ROHS
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  • Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
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  • Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.

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