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TAJB475K016RNJ 16V 475A Low Rds(on) TO-263 Package High Power Density Reliable Performance Efficient Thermal Management Ideal for Automotive & Industrial Applications
FEATURES
• General Purpose SMT Chip Tantalum Series
• 100% Surge Current Tested
• 17 Case Sizes Available, Standard and Low Profile Down to 1mm Maximum Height
• CV Range: 0.10 - 2200μF / 2.5 - 50V
• J-Lead Construction
APPLICATIONS
• General Low Power DC/DC and LDO
• Entertainment / Infotainment Systems
• Height Restricted Design
Description
The TAJB475K016RNJ is a high-performance N-channel power MOSFET in an advanced TO-263 (D2PAK) package, designed for demanding automotive and industrial applications.
Its core advantage is an extremely low on-resistance (Rds(on)), which significantly reduces power loss and heat generation, enabling high energy efficiency. The device boasts a high continuous drain current capability of 475A and a drain-source voltage of 16V, allowing it to handle high-power loads. Excellent thermal performance ensures reliability and a long service life, even under high-stress conditions.
This MOSFET is an ideal choice for motor control, power management, and various switching circuits, providing a robust and reliable solution for high-power-density designs.
INFORMATION
Category | | |
Mfr | | |
Series | | |
Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | |
Part Status | Active | |
Capacitance | | |
Tolerance | ±10% | |
Voltage - Rated | 16 V | |
Type | Molded | |
ESR (Equivalent Series Resistance) | 3.5Ohm | |
Operating Temperature | -55°C ~ 125°C | |
Lifetime @ Temp. | - | |
Mounting Type | Surface Mount | |
Package / Case | 1411 (3528 Metric), 1210 | |
Size / Dimension | 0.138" L x 0.110" W (3.50mm x 2.80mm) | |
Height - Seated (Max) | 0.083" (2.10mm) | |
Lead Spacing | - | |
Manufacturer Size Code | B | |
Features | General Purpose | |
Failure Rate | - |
Drawing
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