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SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs
Features
TrenchMOS™ technology
Very fast switching
Subminiature surface mount package.
Applications
Battery management
High speed switch
Low power DC to DC converter.
Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology
Product availability: SI2304DS in SOT23.
INFORMATION
Category | | |
Mfr | | |
Series | | |
Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | |
Part Status | Obsolete | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | 30 V | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 117mOhm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 2V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 830mW (Tc) | |
Operating Temperature | -65°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-236AB | |
Package / Case |
Drawing
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